Invention Grant
- Patent Title: Semiconductor element, semiconductor device, and method for manufacturing the same
- Patent Title (中): 半导体元件，半导体器件及其制造方法
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Application No.: US13956444Application Date: 2013-08-01
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Publication No.: US08823074B2Publication Date: 2014-09-02
- Inventor: Hideomi Suzawa , Motomu Kurata , Mayumi Mikami
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-276004 20091204
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/336
Abstract:
The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer.
Public/Granted literature
- US20140027767A1 Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same Public/Granted day:2014-01-30
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