Dense arrays and charge storage devices

Invention Grant

US08823076B2 Dense arrays and charge storage devices 有权

Title translation: 密集阵列和电荷存储设备

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Patent Title: Dense arrays and charge storage devices
Patent Title (中): 密集阵列和电荷存储设备
Application No.: US14227425

Application Date: 2014-03-27
Publication No.: US08823076B2

Publication Date: 2014-09-02
Inventor: Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald
Applicant: SanDisk 3D LLC
Applicant Address: US CA Milpitas
Assignee: SanDisk 3D LLC
Current Assignee: SanDisk 3D LLC
Current Assignee Address: US CA Milpitas
Agency: The Marbury Law Group, PLLC
Main IPC: H01L29/792
IPC: H01L29/792 ; H01L27/115 ; H01L29/788

Abstract:

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

Abstract(Chinese):

提供了一种包括多个器件级的电荷存储器件的单片三维阵列，其中通过化学机械抛光将两个连续的器件级之间的至少一个表面平坦化。

Public/Granted literature

US20140217491A1 DENSE ARRAYS AND CHARGE STORAGE DEVICES Public/Granted day:2014-08-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/792	......带有电荷捕获栅绝缘体，例如MNOS存储晶体管