Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13765941Application Date: 2013-02-13
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Publication No.: US08823079B2Publication Date: 2014-09-02
- Inventor: Takashi Watanabe , Jun Takayasu
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-133516 20120613
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L21/30 ; H01L21/306
Abstract:
According to one embodiment, a semiconductor device includes a substrate, a foundation structure, a first insulating film, and a second insulating film. The foundation structure is provided on the substrate. The foundation structure includes a plurality of circuit components and a gap provided between the circuit components. The first insulating film is provided on the foundation structure. The second insulating film is provided on the first insulating film. A Young's modulus of the second insulating film is lower than a Young's modulus of the first insulating film and a Young's modulus of a silicon oxide film.
Public/Granted literature
- US20130334590A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2013-12-19
Information query
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