Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13205671Application Date: 2011-08-09
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Publication No.: US08823082B2Publication Date: 2014-09-02
- Inventor: Makoto Yanagisawa
- Applicant: Makoto Yanagisawa
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-184118 20100819
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/04
Abstract:
The present invention is a semiconductor device including a first electrode over a substrate; a pair of oxide semiconductor films in contact with the first electrode; a second electrode in contact with the pair of oxide semiconductor films; a gate insulating film covering at least the first electrode and the pair of oxide semiconductor films; and a third electrode that is in contact with the gate insulating film and is formed at least between the pair of oxide semiconductor films. When the donor density of the oxide semiconductor films is 1.0×1013/cm3 or less, the thickness of the oxide semiconductor films is made larger than the in-plane length of each side of the oxide semiconductor films which is in contact with the first electrode.
Public/Granted literature
- US20120043542A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-02-23
Information query
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