A SGT-production method includes forming a fin-shaped silicon layer on a silicon substrate, forming a first insulating film around the fin-shaped silicon layer, forming a pillar-shaped silicon layer in an upper portion of the fin-shaped silicon layer, where the pillar-shaped silicon layer has the same width as the fin-shaped silicon layer, forming a gate insulating film around the pillar-shaped silicon layer, forming, around the gate insulating film, a metal film and a polysilicon film thinner than the width of the pillar-shaped silicon layer, forming a third resist for forming a gate line, performing anisotropic etching to form the gate line, depositing a fourth resist, exposing the polysilicon film on a sidewall of an upper portion of the pillar-shaped silicon layer, removing the exposed polysilicon film by etching, removing the fourth resist, removing the metal film by etching, and forming a gate electrode connecting to the gate line.