Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13346829Application Date: 2012-01-10
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Publication No.: US08823086B2Publication Date: 2014-09-02
- Inventor: Chul Hwan Cho
- Applicant: Chul Hwan Cho
- Applicant Address: KR Icheon
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2011-0044205 20110511
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device having a buried gate is provided. The semiconductor device is formed in a structure in which a plurality of contacts having small step differences are stacked without forming a metal contact applying an operation voltage to the buried gate in a single contact and a contact pad is formed between the contacts so that failure due to misalignment can be prevented without a separate additional process for forming the contacts.
Public/Granted literature
- US20120286354A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-11-15
Information query
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