Invention Grant
US08823087B2 Semiconductor device including auxiliary structure and methods for manufacturing a semiconductor device
有权
包括辅助结构的半导体器件和用于制造半导体器件的方法
- Patent Title: Semiconductor device including auxiliary structure and methods for manufacturing a semiconductor device
- Patent Title (中): 包括辅助结构的半导体器件和用于制造半导体器件的方法
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Application No.: US13420768Application Date: 2012-03-15
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Publication No.: US08823087B2Publication Date: 2014-09-02
- Inventor: Franz Hirler , Markus Zundel
- Applicant: Franz Hirler , Markus Zundel
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A semiconductor device includes a trench region extending into a drift zone of a semiconductor body from a surface. The semiconductor device further includes a dielectric structure including a first step and a second step along a lateral side of the trench region. The semiconductor device further includes an auxiliary structure of a first conductivity type between the first step and the second step, a gate electrode in the trench region and a body region of a second conductivity type other than the first conductivity type of the drift zone. The auxiliary structure adjoins each one of the drift zone, the body region and the dielectric structure.
Public/Granted literature
- US20130240985A1 Semiconductor Device Including Auxiliary Structure and Methods for Manufacturing A Semiconductor Device Public/Granted day:2013-09-19
Information query
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