Invention Grant
- Patent Title: Semiconductor device with buried gate and method for fabricating the same
- Patent Title (中): 具有埋栅的半导体器件及其制造方法
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Application No.: US13858559Application Date: 2013-04-08
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Publication No.: US08823088B2Publication Date: 2014-09-02
- Inventor: Se-Aug Jang
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0070992 20090731
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/088 ; H01L27/108 ; H01L29/78 ; H01L29/423 ; H01L27/02
Abstract:
A semiconductor device includes a first region and a second region, a buried gate arranged in the first region, and an oxidation prevention barrier surrounding the first region.
Public/Granted literature
- US20130228859A1 SEMICONDUCTOR DEVICE WITH BURIED GATE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-09-05
Information query
IPC分类:
