Invention Grant
- Patent Title: SiC semiconductor power device
- Patent Title (中): SiC半导体功率器件
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Application No.: US13087780Application Date: 2011-04-15
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Publication No.: US08823089B2Publication Date: 2014-09-02
- Inventor: Hans-Joachim Schulze , Roland Rupp
- Applicant: Hans-Joachim Schulze , Roland Rupp
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L31/062 ; H01L29/06 ; H01L29/161 ; H01L29/16 ; H01L29/417 ; H01L29/778 ; H01L29/872 ; H01L29/78
Abstract:
A semiconductor power device includes a SiC semiconductor body. At least part of the SiC semiconductor body constitutes a drift zone. A first contact is at a first side of the SiC semiconductor body. A second contact is at a second side of the SiC semiconductor body. The first side is opposite the second side. A current path between the first contact and the second contact includes at least one graphene layer.
Public/Granted literature
- US20120261673A1 SiC Semiconductor Power Device Public/Granted day:2012-10-18
Information query
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