Invention Grant
- Patent Title: Field-effect transistor and method of creating same
- Patent Title (中): 场效应晶体管及其制作方法
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Application No.: US13029490Application Date: 2011-02-17
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Publication No.: US08823090B2Publication Date: 2014-09-02
- Inventor: Gerald K Bartley , Darryl J Becker , Philip R Germann , Andrew B Maki , John E Sheets, II
- Applicant: Gerald K Bartley , Darryl J Becker , Philip R Germann , Andrew B Maki , John E Sheets, II
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Nicholas L. Cadmus; Edward A. Gecovich
- Main IPC: H01L29/772
- IPC: H01L29/772
Abstract:
A field-effect transistor has a gate, a source, and a drain. The gate has a via extending through a semiconductor chip substrate from one surface to an opposite surface of the semiconductor chip substrate. The source has a first toroid of ion dopants implanted in the semiconductor chip substrate surrounding one end of the via on the one surface of the semiconductor chip substrate. The drain has a second toroid of ion dopants implanted in the semiconductor chip substrate surrounding an opposite end of the via on the opposite surface of the semiconductor chip substrate.
Public/Granted literature
- US20120211829A1 FIELD-EFFECT TRANSISTOR AND METHOD OF CREATING SAME Public/Granted day:2012-08-23
Information query
IPC分类:
