Semiconductor devices and methods of making

Invention Grant

US08823100B2 Semiconductor devices and methods of making 有权

Title translation: 半导体器件及制造方法

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Patent Title: Semiconductor devices and methods of making
Patent Title (中): 半导体器件及制造方法
Application No.: US11855459

Application Date: 2007-09-14
Publication No.: US08823100B2

Publication Date: 2014-09-02
Inventor: Gregory Herman , Peter Mardllovich , Randy Hoffman
Applicant: Gregory Herman , Peter Mardllovich , Randy Hoffman
Applicant Address: US TX Houston
Assignee: Hewlett-Packard Development Company, L.P.
Current Assignee: Hewlett-Packard Development Company, L.P.
Current Assignee Address: US TX Houston
Main IPC: H01L29/72
IPC: H01L29/72 ; H01L29/786 ; H01L29/66 ; H01L29/417 ; H01L29/739

Semiconductor devices and methods of making

Abstract:

In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a selected distance from the first electrode. After the insulator is formed, a second electrode is formed electrically coupled with the semiconductor material adjoining the insulator.

Abstract(Chinese):

在形成半导体器件的一种方法中，第一电极形成为与半导体材料电耦合。在形成第一电极之后，在与第一电极相邻并且从第一电极延伸选定距离的半导体材料上形成绝缘体。在形成绝缘体之后，第二电极与邻接绝缘体的半导体材料电耦合。

Public/Granted literature

US20080042201A1 Semiconductor Devices and Methods of Making Public/Granted day:2008-02-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70	...双极器件
H01L29/72	....晶体管型器件，如连续响应于所施加的控制信号的