Invention Grant
- Patent Title: Solid-state image sensor
- Patent Title (中): 固态图像传感器
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Application No.: US13601439Application Date: 2012-08-31
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Publication No.: US08823123B2Publication Date: 2014-09-02
- Inventor: Koichi Kokubun , Yusaku Konno
- Applicant: Koichi Kokubun , Yusaku Konno
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-278646 20111220
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L21/00 ; H01L27/146 ; H01L31/0216

Abstract:
According to one embodiment, there is provided a solid-state image sensor including a photoelectric conversion layer, and a multilayer interference filter. The multilayer interference filter is arranged to conduct light of a particular color, of incident light, selectively to the photoelectric conversion layer. The multilayer interference filter has a laminate structure in which a first layer having a first refraction index and a second layer having a second refraction index are repeatedly laminated, and a third layer which is in contact with a lower surface of the laminate structure and has a third refraction index. A lowermost layer of the laminate structure is the second layer. The third refraction index is not equal to the first refraction index and is higher than the second refraction index.
Public/Granted literature
- US20130154041A1 SOLID-STATE IMAGE SENSOR Public/Granted day:2013-06-20
Information query
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