Invention Grant
- Patent Title: Semiconductor device, electronic apparatus, and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置，电子装置以及半导体装置的制造方法
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Application No.: US13196268Application Date: 2011-08-02
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Publication No.: US08823134B2Publication Date: 2014-09-02
- Inventor: Yuichi Miyagawa , Hideki Fujii , Kenji Furuya
- Applicant: Yuichi Miyagawa , Hideki Fujii , Kenji Furuya
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2010-178012 20100806; JP2011-126543 20110606
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L21/56 ; H01L23/48 ; H01L49/02 ; H01L23/522 ; H01L23/552 ; H01L23/433 ; H01L23/31 ; H01L23/00 ; H01L23/50 ; H01L23/498
Abstract:
A semiconductor chip is mounted on a first surface of an interconnect substrate, and has a multilayer interconnect layer. A first inductor is formed over the multilayer interconnect layer, and a wiring axis direction thereof is directed in a horizontal direction to the interconnect substrate. A second inductor is formed on the multilayer interconnect layer, and a wiring axis direction thereof is directed in the horizontal direction to the interconnect substrate. The second inductor is opposite to the first inductor. A sealing resin seals at least the first surface of the interconnect substrate and the semiconductor chip. A groove is formed over the whole area of a portion that is positioned between the at least first inductor and the second inductor of a boundary surface of the multilayer interconnect layer and the sealing resin.
Public/Granted literature
- US20120032298A1 SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-02-09
Information query
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