Invention Grant
- Patent Title: GaN vertical bipolar transistor
- Patent Title (中): GaN垂直双极晶体管
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Application No.: US13675916Application Date: 2012-11-13
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Publication No.: US08823140B2Publication Date: 2014-09-02
- Inventor: Hui Nie , Andrew Edwards , Isik Kizilyalli , Dave Bour
- Applicant: Avogy, Inc.
- Applicant Address: US CA San Jose
- Assignee: Avogy, Inc.
- Current Assignee: Avogy, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
An embodiment of a semiconductor device includes a III-nitride base structure of a first conductivity type, and a III-nitride emitter structure of a second conductivity type having a first surface and a second surface. The second surface is substantially opposite the first surface. The first surface of the III-nitride emitter structure is coupled to a surface of the III-nitride base structure. The semiconductor also includes a first dielectric layer coupled to the second surface of the III-nitride emitter structure, and a spacer coupled to a sidewall of the III-nitride emitter structure and the surface of the III-nitride base structure. The semiconductor also includes a base contact structure with a III-nitride material coupled to the spacer, the surface of the III-nitride base structure, and the first dielectric layer, such that the first dielectric layer and the spacer are disposed between the base contact structure and the III-nitride emitter structure.
Public/Granted literature
- US20140131837A1 GAN VERTICAL BIPOLAR TRANSISTOR Public/Granted day:2014-05-15
Information query
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