Invention Grant
US08823147B2 Semiconductor substrate including doped zones forming P-N junctions
有权
半导体衬底包括形成P-N结的掺杂区
- Patent Title: Semiconductor substrate including doped zones forming P-N junctions
- Patent Title (中): 半导体衬底包括形成P-N结的掺杂区
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Application No.: US13555395Application Date: 2012-07-23
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Publication No.: US08823147B2Publication Date: 2014-09-02
- Inventor: Olivier Philippe Kellener , Gérard Dubois , Mehdi Mohamed Kanoun , Stephen McArdle
- Applicant: Olivier Philippe Kellener , Gérard Dubois , Mehdi Mohamed Kanoun , Stephen McArdle
- Applicant Address: FR Corbeil Essonnes
- Assignee: Altis Semiconductor
- Current Assignee: Altis Semiconductor
- Current Assignee Address: FR Corbeil Essonnes
- Agency: Sofer & Haroun, LLP
- Priority: FR1156772 20110725
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/761 ; H01L21/8238 ; H01L21/8249
Abstract:
A semiconductor substrate (100) has three doped zones (1), (2) and (3), forming a P-N junction (101), the third zone being located between the first zone and the second zone. The P-N junction of the substrate further has a fourth doped zone (4) having a first portion (4A) in contact with the first zone; and a second portion (4B) in contact with the third zone (3), said second portion (4B) extending in the direction of the second zone (2), and not being in contact with the second zone (2); where the fourth zone (4) being doped with the same type of doping as that of the first zone.
Public/Granted literature
- US20130026611A1 SEMICONDUCTOR SUBSTRATE INCLUDING DOPED ZONES FORMING P-N JUNCTIONS Public/Granted day:2013-01-31
Information query
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