Invention Grant
- Patent Title: Copper pillar bump with non-metal sidewall protection structure and method of making the same
- Patent Title (中): 铜柱突起与非金属侧壁保护结构及制作方法相同
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Application No.: US13551421Application Date: 2012-07-17
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Publication No.: US08823167B2Publication Date: 2014-09-02
- Inventor: Yi-Wen Wu , Cheng-Chung Lin , Chien Ling Hwang , Chung-Shi Liu
- Applicant: Yi-Wen Wu , Cheng-Chung Lin , Chien Ling Hwang , Chung-Shi Liu
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52
Abstract:
This description relates to an integrated circuit device including a conductive pillar formed over a substrate. The conductive pillar has a sidewall surface and a top surface. The integrated circuit device further includes an under-bump-metallurgy (UBM) layer between the substrate and the conductive pillar. The UBM layer has a surface region. The integrated circuit device further includes a protection structure on the sidewall surface of the conductive pillar and the surface region of the UBM layer. The protection structure is formed of a non-metal material.
Public/Granted literature
- US20120280388A1 COPPER PILLAR BUMP WITH NON-METAL SIDEWALL PROTECTION STRUCTURE AND METHOD OF MAKING THE SAME Public/Granted day:2012-11-08
Information query
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