Invention Grant
- Patent Title: Die underfill structure and method
- Patent Title (中): 底部填充结构和方法
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Application No.: US13600621Application Date: 2012-08-31
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Publication No.: US08823168B2Publication Date: 2014-09-02
- Inventor: Kurt Peter Wachtler
- Applicant: Kurt Peter Wachtler
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Eugene C. Conser; Frederick J. Telecky, Jr.
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/56
Abstract:
A method of attaching an IC wafer having a plurality of copper pillars (“CuP's) projecting from one face thereof to a substrate having a plurality of contact pads on one face thereof including applying a film having a substantial amount of filler particles therein to the one face of the wafer; applying an a-stage resin having substantially no filler particles therein to the one face of the substrate; and interfacing the film with the a-stage resin.
Public/Granted literature
- US20140061896A1 Die Underfill Structure And Method Public/Granted day:2014-03-06
Information query
IPC分类:
