Invention Grant
- Patent Title: Stack semiconductor apparatus having a through silicon via and method of fabricating the same
- Patent Title (中): 具有硅通孔的堆叠半导体装置及其制造方法
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Application No.: US13604449Application Date: 2012-09-05
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Publication No.: US08823181B2Publication Date: 2014-09-02
- Inventor: Chul Kim , Jong Chern Lee
- Applicant: Chul Kim , Jong Chern Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2011-0146442 20111229
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/04 ; H01L23/02 ; H01L23/12 ; H01L25/065 ; H01L23/498 ; H01L23/00 ; H01L21/768
Abstract:
In a semiconductor apparatus, a plurality of semiconductor chips including through-silicon vias are stacked in a vertical direction, wherein the through-silicon via formed in each semiconductor chip protrudes beyond heights of each semiconductor chip.
Public/Granted literature
- US20130241054A1 SEMICONDUCTOR APPARATUS AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-09-19
Information query
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