Invention Grant
- Patent Title: Control of semiconductor devices to selectively supply power to power domains in a hierarchical structure
- Patent Title (中): 半导体器件的控制以分级结构选择性地向功率域供电
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Application No.: US12788114Application Date: 2010-05-26
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Publication No.: US08823209B2Publication Date: 2014-09-02
- Inventor: Masahiro Tatsumi , Takashi Shikata
- Applicant: Masahiro Tatsumi , Takashi Shikata
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2008-162335 20080620; JP2009-148066 20090622
- Main IPC: G06F1/26
- IPC: G06F1/26 ; G06F1/32 ; H02J9/00 ; H03K19/00

Abstract:
A power controlling circuit is assigned to each of a plurality of power domains of which power may be on/off-controlled, and which have a first hierarchical structure included in a semiconductor device, and these power controlling circuits are connected in accordance with a second hierarchical structure corresponding to the first hierarchical structure, and thereby, a power management unit controlling power supply to the plurality of power domains is configured, as a result that the power management unit performing power supply control depending on power control specification may be designed easily.
Public/Granted literature
- US20100231044A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-09-16
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