The present invention relates to volume and/or shape memory systems for which the volume and/or shape can be adjusted by controlling one or more variables such as applied voltage and temperature. In one embodiment, the volume and/or shape memory systems of the present invention are controlled and/or adjusted by way of a temperature mechanism. In another embodiment, the volume and/or shape memory systems of the present invention are controlled and/or adjusted by way of a voltage mechanism. In still another embodiment, the present invention provides a device that contains, in part, a smart volume and/or shape memory material that exhibits high energy densities, and can provide large displacements over broad temperature and/or voltage ranges.