Invention Grant
US08823337B2 Boost converter with integrated high power discrete FET and low voltage controller
有权
具有集成大功率分立FET和低压控制器的升压转换器
- Patent Title: Boost converter with integrated high power discrete FET and low voltage controller
- Patent Title (中): 具有集成大功率分立FET和低压控制器的升压转换器
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Application No.: US13909289Application Date: 2013-06-04
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Publication No.: US08823337B2Publication Date: 2014-09-02
- Inventor: Allen Chang , Wai-Keung Peter Cheng
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua D. Isenberg
- Main IPC: G05F1/10
- IPC: G05F1/10 ; H01H25/04
Abstract:
A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor. The low voltage controller integrated circuit and the high voltage, vertical, discrete field effect transistor are packaged together in a single package on a common electrically conductive die pad, wherein the controller IC is attached to the die pad using insulating adhesive and the FET is attached to the die pad using conductive adhesive.
Public/Granted literature
- US20130265015A1 BOOST CONVERTER WITH INTEGRATED HIGH POWER DISCRETE FET AND LOW VOLTAGE CONTROLLER Public/Granted day:2013-10-10
Information query
IPC分类:
