Invention Grant
- Patent Title: Charge-pump circuit
- Patent Title (中): 电荷泵电路
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Application No.: US13133246Application Date: 2009-12-17
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Publication No.: US08823443B2Publication Date: 2014-09-02
- Inventor: Gilberto Curatola , Youri Victorovitch Ponomarev
- Applicant: Gilberto Curatola , Youri Victorovitch Ponomarev
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP08172166 20081218
- International Application: PCT/IB2009/055812 WO 20091217
- International Announcement: WO2010/070603 WO 20100624
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02

Abstract:
A charge-pump circuit a plurality of transistor stages connected in series between a supply voltage input node and a boosted voltage output node, wherein at least one transistor stage comprises a multiple-gate transistor, which transistor comprises at least two gates, of which one is a first gate for switching the transistor on or off according to a voltage applied to the first gate, and one is an additional second gate for controlling the threshold voltage of the multiple-gate transistor, independently of the first gate, according to a control voltage applied to the second gate.
Public/Granted literature
- US20110241767A1 CHARGE-PUMP CIRCUIT Public/Granted day:2011-10-06
Information query
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