Invention Grant
US08823893B2 Liquid crystal display device with transistor including oxide semiconductor layer and electronic device
有权
具有包括氧化物半导体层和电子器件的晶体管的液晶显示装置
- Patent Title: Liquid crystal display device with transistor including oxide semiconductor layer and electronic device
- Patent Title (中): 具有包括氧化物半导体层和电子器件的晶体管的液晶显示装置
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Application No.: US12968336Application Date: 2010-12-15
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Publication No.: US08823893B2Publication Date: 2014-09-02
- Inventor: Shunpei Yamazaki
- Applicant: Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-288312 20091218; JP2010-092111 20100413
- Main IPC: G02F1/136
- IPC: G02F1/136 ; G09G3/36 ; H01L29/10 ; H01L29/04

Abstract:
To reduce power consumption and suppress display degradation of a liquid crystal display device. To suppress display degradation due to an external factor such as temperature. A transistor whose channel formation region is formed using an oxide semiconductor layer is used for a transistor provided in each pixel. Note that with the use of a high-purity oxide semiconductor layer, off-state current of the transistor at a room temperature can be 10 aA/μm or less and off-state current at 85° C. can be 100 aA/μm or less. Consequently, power consumption of a liquid crystal display device can be reduced and display degradation can be suppressed. Further, as described above, off-state current of the transistor at a temperature as high as 85° C. can be 100 aA/μm or less. Thus, display degradation of a liquid crystal display device due to an external factor such as temperature can be suppressed.
Public/Granted literature
- US20110149185A1 LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE Public/Granted day:2011-06-23
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