Invention Grant
US08824186B2 Embedded non-volatile memory circuit for implementing logic functions across periods of power disruption
有权
嵌入式非易失性存储器电路，用于在电源中断期间实现逻辑功能
- Patent Title: Embedded non-volatile memory circuit for implementing logic functions across periods of power disruption
- Patent Title (中): 嵌入式非易失性存储器电路，用于在电源中断期间实现逻辑功能
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Application No.: US13543652Application Date: 2012-07-06
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Publication No.: US08824186B2Publication Date: 2014-09-02
- Inventor: Joseph T. Evans, Jr.
- Applicant: Joseph T. Evans, Jr.
- Applicant Address: US NM Albuquerque
- Assignee: Radiant Technologies, Inc.
- Current Assignee: Radiant Technologies, Inc.
- Current Assignee Address: US NM Albuquerque
- Agent Calvin B. Ward
- Main IPC: G11C11/22
- IPC: G11C11/22
Abstract:
A circuit having an autonomous ferroelectric memory latch (AML) is disclosed. An AML characterized by an AML input, an AML output, a first AML power contact, a second AML power contact and an AML state, and a first switch in series with one of the AML input or the AML output. The switch is positioned to prevent the state of the AML from changing when power is provided between the first and second AML power contacts. In one aspect of the invention, the circuit could include a second switch in series with the other of the AML input or the AML output and a latch in series with the AML input or the AML output. The latch is positioned such that a direct path back does not exist between the AML output and the AML input.
Public/Granted literature
- US20120275209A1 Embedded Non-Volatile Memory Circuit for Implementing Logic Functions Across Periods of Power Disruption Public/Granted day:2012-11-01
Information query
