Invention Grant
- Patent Title: Semiconductor storage device
- Patent Title (中): 半导体存储设备
-
Application No.: US13469159Application Date: 2012-05-11
-
Publication No.: US08824193B2Publication Date: 2014-09-02
- Inventor: Seiichi Yoneda
- Applicant: Seiichi Yoneda
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2011-111738 20110518
- Main IPC: G11C11/24
- IPC: G11C11/24

Abstract:
A semiconductor storage device which stops and resumes the supply of power supply voltage without the necessity of saving and returning a data signal between a volatile storage device and a nonvolatile storage device is provided. In the semiconductor storage device, data is held in a data holding portion connected to a transistor including a semiconductor layer containing an oxide semiconductor and a capacitor. The potential of the data held in the data holding portion is controlled by a data potential holding circuit and a data potential control circuit. The data potential holding circuit can output data without leaking electric charge, and the data potential control circuit can control the potential of the data held in the data holding portion without leaking electric charge by capacitive coupling through the capacitor.
Public/Granted literature
- US20120294066A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2012-11-22
Information query