Invention Grant
US08824209B2 Non-volatile memory device having vertical structure and method of operating the same
有权
具有垂直结构的非易失性存储器件及其操作方法
- Patent Title: Non-volatile memory device having vertical structure and method of operating the same
- Patent Title (中): 具有垂直结构的非易失性存储器件及其操作方法
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Application No.: US13836212Application Date: 2013-03-15
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Publication No.: US08824209B2Publication Date: 2014-09-02
- Inventor: Doogon Kim , Sunil Shim , Hansoo Kim , Wonseok Cho , Jaehoon Jang , Jaehun Jeong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2009-0008041 20090202; KR10-2009-0083148 20090903; KR10-2010-0006475 20100125
- Main IPC: G11C16/04
- IPC: G11C16/04 ; H01L27/115 ; H01L29/66 ; G11C16/10 ; H01L29/788
Abstract:
Provided is a method of operating a non-volatile memory device. The method includes applying a turn-on voltage to each of first and second string select transistors of a first NAND string, applying first and second voltages to third and fourth string select transistors of a second NAND string, respectively, and applying a high voltage to word lines connected with memory cells of the first and second NAND strings.
Public/Granted literature
- US20130201758A1 NON-VOLATILE MEMORY DEVICE HAVING VERTICAL STRUCTURE AND METHOD OF OPERATING THE SAME Public/Granted day:2013-08-08
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