Invention Grant
US08824213B2 Method of using memory instruction including parameter to affect operating condition of memory
有权
使用包含参数的存储器指令影响存储器的工作状态的方法
- Patent Title: Method of using memory instruction including parameter to affect operating condition of memory
- Patent Title (中): 使用包含参数的存储器指令影响存储器的工作状态的方法
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Application No.: US13770881Application Date: 2013-02-19
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Publication No.: US08824213B2Publication Date: 2014-09-02
- Inventor: Federico Pio
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/06 ; G06F13/00 ; G11C16/26 ; G11C16/12 ; G06F21/60 ; G11C5/14 ; G11C16/30 ; G11C7/22 ; G11C7/10 ; G11C11/56
Abstract:
Subject matter disclosed herein relates to techniques to use a memory device. A method includes receiving a memory instruction comprising at least one parameter representative of at least one threshold voltage value and a read command to read at least one cell of the memory device. The method further includes detecting at least one voltage value from the at least one cell. The method further includes comparing the at least one voltage value to the at least one threshold voltage value. The method further includes determining at least one logical value of the at least one cell in response to the comparison of the at least one voltage value to the at least one threshold voltage value.
Public/Granted literature
- US20130167251A1 METHOD OF USING MEMORY INSTRUCTION INCLUDING PARAMETER TO AFFECT OPERATING CONDITION OF MEMORY Public/Granted day:2013-06-27
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