Invention Grant
- Patent Title: Power source circuit and semiconductor memory circuit using the same
- Patent Title (中): 电源电路和半导体存储电路使用相同
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Application No.: US12840223Application Date: 2010-07-20
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Publication No.: US08824219B2Publication Date: 2014-09-02
- Inventor: Young Jo Ko
- Applicant: Young Jo Ko
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2009-0117235 20091130
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C29/00
Abstract:
A semiconductor memory circuit includes: a plurality of memory regions; a plurality of driving units configured to be enabled in response to a plurality of enable signals, respectively, and generate a predetermined voltage used for operations of the plurality of memory regions; and an enable control unit configured to count a control pulse and activate one or more enable signals among the plurality of enable signals.
Public/Granted literature
- US20110128798A1 POWER SOURCE CIRCUIT AND SEMICONDUCTOR MEMORY CIRCUIT USING THE SAME Public/Granted day:2011-06-02
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