Invention Grant
US08824221B2 Hybrid memory device, system including the same, and method of reading and writing data in the hybrid memory device
有权
混合存储装置，包含该混合存储装置的系统以及在混合存储装置中读取和写入数据的方法
- Patent Title: Hybrid memory device, system including the same, and method of reading and writing data in the hybrid memory device
- Patent Title (中): 混合存储装置，包含该混合存储装置的系统以及在混合存储装置中读取和写入数据的方法
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Application No.: US13616398Application Date: 2012-09-14
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Publication No.: US08824221B2Publication Date: 2014-09-02
- Inventor: Geun-Hee Cho , Duc Nguyen , Dong-Hwi Kim
- Applicant: Geun-Hee Cho , Duc Nguyen , Dong-Hwi Kim
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2011-0097186 20110926
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/00 ; G11C5/04 ; G11C7/10 ; G11C14/00
Abstract:
A hybrid memory device is provided. The hybrid memory device includes a DRAM, a non-volatile memory and a control circuit. The control circuit selects one of output data of the DRAM and output data of the non-volatile memory according to a mode selecting signal and output the selected data. The control circuit outputs data requested to be output from the DRAM when the data requested to be output is in the DRAM, and may output the data requested to be output from the non-volatile memory when the data requested to be output is in the non-volatile memory. Accordingly, the hybrid memory device has a high speed in a read and write operation, and has low power consumption.
Public/Granted literature
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