Invention Grant
US08824226B2 Providing capacitors to improve radiation hardening in memory elements
有权
提供电容器以改善记忆元件的辐射硬化
- Patent Title: Providing capacitors to improve radiation hardening in memory elements
- Patent Title (中): 提供电容器以改善记忆元件的辐射硬化
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Application No.: US12751542Application Date: 2010-03-31
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Publication No.: US08824226B2Publication Date: 2014-09-02
- Inventor: Ching-Hao Shaw , Subramani Kengeri
- Applicant: Ching-Hao Shaw , Subramani Kengeri
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/00 ; G11C11/412 ; H01L49/02 ; H01L27/10 ; H01L27/105 ; H01L23/522
Abstract:
Some embodiments are related to a mesh capacitor, which improves the SER FIT rate. In an embodiment, the capacitor is connected between an input and an output of a latch in a flip-flop, making the flip-flop harder to flip due to radiation (e.g., from neutrons and/or alpha particles). In some embodiments, the capacitor is built directly vertically on top of the flip-flop, saving chip layout areas.
Public/Granted literature
- US20100254069A1 PROVIDING CAPACITORS TO IMPROVE RADIATION HARDENING IN MEMORY ELEMENTS Public/Granted day:2010-10-07
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