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US08824227B2 Parallel test circuit and method of semiconductor memory apparatus 有权
半导体存储器的并行测试电路及方法

Parallel test circuit and method of semiconductor memory apparatus
Abstract:
A parallel test circuit of a semiconductor memory apparatus includes a memory bank which includes first and second sub banks having test global lines, respectively, and sharing a global line connected to each of the first and second sub banks. When a read command is applied during a test mode, the parallel test circuit compares data loaded in the global line to data loaded in the test global line of the second sub bank to attain a comparison result, compresses the comparison result to attain a compression signal, and outputs the compression signal as a test output signal to a pad.
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