Invention Grant
- Patent Title: Parallel test circuit and method of semiconductor memory apparatus
- Patent Title (中): 半导体存储器的并行测试电路及方法
-
Application No.: US13585928Application Date: 2012-08-15
-
Publication No.: US08824227B2Publication Date: 2014-09-02
- Inventor: Bo Yeun Kim , Ji Eun Jang
- Applicant: Bo Yeun Kim , Ji Eun Jang
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2011-0144565 20111228
- Main IPC: G11C29/26
- IPC: G11C29/26

Abstract:
A parallel test circuit of a semiconductor memory apparatus includes a memory bank which includes first and second sub banks having test global lines, respectively, and sharing a global line connected to each of the first and second sub banks. When a read command is applied during a test mode, the parallel test circuit compares data loaded in the global line to data loaded in the test global line of the second sub bank to attain a comparison result, compresses the comparison result to attain a compression signal, and outputs the compression signal as a test output signal to a pad.
Public/Granted literature
- US20130170305A1 PARALLEL TEST CIRCUIT AND METHOD OF SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2013-07-04
Information query