Invention Grant
US08824229B2 Semiconductor memory apparatus having a pre-discharging function, semiconductor integrated circuit having the same, and method for driving the same
有权
具有预放电功能的半导体存储装置，具有该放电功能的半导体集成电路及其驱动方法
- Patent Title: Semiconductor memory apparatus having a pre-discharging function, semiconductor integrated circuit having the same, and method for driving the same
- Patent Title (中): 具有预放电功能的半导体存储装置，具有该放电功能的半导体集成电路及其驱动方法
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Application No.: US13219627Application Date: 2011-08-27
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Publication No.: US08824229B2Publication Date: 2014-09-02
- Inventor: Hyun Joo Lee , Hyuck Soo Yoon
- Applicant: Hyun Joo Lee , Hyuck Soo Yoon
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2010-0131287 20101221
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C13/00 ; G11C7/12
Abstract:
A semiconductor memory apparatus includes a bit line coupled to a plurality of memory cells, a discharge controller configured to generate a bit line discharge signal to pre-discharge the bit line before the memory cells are activated, and a bit line discharge block coupled to the bit line and configured to discharge the bit line in response to the bit line discharge signal.
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