Invention Grant
- Patent Title: X-ray reflecting device
- Patent Title (中): X射线反射装置
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Application No.: US13008866Application Date: 2011-01-18
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Publication No.: US08824631B2Publication Date: 2014-09-02
- Inventor: Kazuhisa Mitsuda , Manabu Ishida , Yuichiro Ezoe , Kazuo Nakajima
- Applicant: Kazuhisa Mitsuda , Manabu Ishida , Yuichiro Ezoe , Kazuo Nakajima
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Japan Aerospace Exploration Agency,Tokyo Manufacturing University
- Current Assignee: Japan Aerospace Exploration Agency,Tokyo Manufacturing University
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Priority: JP2008-186840 20080718
- Main IPC: G21K1/06
- IPC: G21K1/06

Abstract:
Provided is a technique for X-ray reflection, such as an X-ray reflecting mirror, capable of achieving a high degree of smoothness of a reflecting surface, high focusing (reflecting) performance, stability in a curved surface shape, and a reduction in overall weight. A silicon plate (silicon wafer) is subjected to thermal plastic deformation to form an X-ray reflecting mirror having a reflecting surface with a stable curved surface shape. The silicon wafer can be deformed to any shape by applying a pressure thereto in a hydrogen atmosphere at a high temperature of about 1300° C. The silicon plate may be simultaneously subjected to hydrogen annealing to further reduce roughness of a silicon surface to thereby provide enhanced reflectance.
Public/Granted literature
- US20110110499A1 X-RAY REFLECTING DEVICE Public/Granted day:2011-05-12
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