Invention Grant
- Patent Title: C-shaped confinement ring for a plasma processing chamber
- Patent Title (中): 用于等离子体处理室的C形限制环
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Application No.: US12828065Application Date: 2010-06-30
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Publication No.: US08826855B2Publication Date: 2014-09-09
- Inventor: Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
- Applicant: Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Buchanan Ingersoll & Rooney PC
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; H01J37/32
Abstract:
Described herein is a confinement ring useful as a component of a capacitively-coupled plasma processing chamber. Inner surfaces of the confinement ring provide an extended plasma confinement zone surrounding a gap between an upper electrode and a lower electrode on which a semiconductor substrate is supported during plasma processing in the chamber.
Public/Granted literature
- US20120000608A1 C-SHAPED CONFINEMENT RING FOR A PLASMA PROCESSING CHAMBER Public/Granted day:2012-01-05
Information query
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