Invention Grant
- Patent Title: Plasma processing method
- Patent Title (中): 等离子体处理方法
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Application No.: US13363415Application Date: 2012-02-01
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Publication No.: US08828254B2Publication Date: 2014-09-09
- Inventor: Yoshiharu Inoue , Tetsuo Ono , Michikazu Morimoto , Masaki Fujii , Masakazu Miyaji
- Applicant: Yoshiharu Inoue , Tetsuo Ono , Michikazu Morimoto , Masaki Fujii , Masakazu Miyaji
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2011-163831 20110727; JP2011-211896 20110928; JP2011-232446 20111024
- Main IPC: C03C15/00
- IPC: C03C15/00 ; H01L21/3213 ; H01J37/32

Abstract:
A plasma processing method and a plasma processing apparatus in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.
Public/Granted literature
- US20130029492A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2013-01-31
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