Invention Grant
- Patent Title: Method for etching a material in the presence of a gas
- Patent Title (中): 在气体存在下蚀刻材料的方法
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Application No.: US13320671Application Date: 2010-05-12
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Publication No.: US08828255B2Publication Date: 2014-09-09
- Inventor: Francis Baillet , Nicolas Gondrexon
- Applicant: Francis Baillet , Nicolas Gondrexon
- Applicant Address: FR Grenoble Cedex FR Saint Martin d'Heres
- Assignee: Institut Polytechnique de Grenoble,Universite Joseph Fourier
- Current Assignee: Institut Polytechnique de Grenoble,Universite Joseph Fourier
- Current Assignee Address: FR Grenoble Cedex FR Saint Martin d'Heres
- Agency: Edwards Wildman Palmer LLP
- Agent Steven M. Jensen; Stephen W. Rafferty
- Priority: FR0953293 20090518
- International Application: PCT/FR2010/050927 WO 20100512
- International Announcement: WO2010/133786 WO 20101125
- Main IPC: C03C15/00
- IPC: C03C15/00 ; C23F1/00 ; H01L21/311 ; H01L21/3213

Abstract:
The invention relates to a method for etching a structure (1) including at least one material (4) to be etched, said method consisting in: selecting at least one chemical species that can react with the material (4) to be etched; selecting at least one soluble compound that can release this chemical species; producing a solution (11) containing said compound; placing the structure (1) in a position such that the surface of the material to be etched is in the presence of the solution and additional bubbles of a gas; and producing high-frequency ultrasounds in the solution, at at least one frequency, capable of generating reactive cavitation bubbles such that the chemical species is generated in the presence of these additional bubbles and reacts with the material to be etched, thereby producing a soluble compound or a precipitate.
Public/Granted literature
- US20120145670A1 METHOD FOR ETCHING A MATERIAL IN THE PRESENCE OF A GAS Public/Granted day:2012-06-14
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