Invention Grant
- Patent Title: Plasma processing apparatus and operation method thereof
- Patent Title (中): 等离子体处理装置及其操作方法
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Application No.: US12379641Application Date: 2009-02-26
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Publication No.: US08828257B2Publication Date: 2014-09-09
- Inventor: Hiroho Kitada , Kazunori Nakamoto , Yosuke Sakai
- Applicant: Hiroho Kitada , Kazunori Nakamoto , Yosuke Sakai
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2008-331817 20081226
- Main IPC: H05H1/00
- IPC: H05H1/00 ; H01L21/306 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; H01J37/32 ; H01L21/687

Abstract:
In a plasma processing apparatus including a processing chamber in a vacuum container to form plasma in the processing chamber in which pressure is reduced, a sample stage in lower part of inside of the processing chamber and having an upper surface on which a wafer to be processed by plasma is put, a plurality of pins in the sample stage to be moved in vertical direction so that the pins abut against rear side of the wafer to move the wafer up and down over the upper surface of the sample stage, and a plurality of openings formed in the upper surface of the sample stage so that the pins are moved in the openings, gas is fed from supply ports communicating with the openings into the processing chamber through the openings when the wafer is not put on the upper surface of the sample stage.
Public/Granted literature
- US20100163403A1 Plasma processing apparatus and operation method thereof Public/Granted day:2010-07-01
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