Invention Grant
- Patent Title: CMP slurry composition and polishing method using the same
- Patent Title (中): CMP浆料组成和抛光方法使用相同
-
Application No.: US13720010Application Date: 2012-12-19
-
Publication No.: US08828266B2Publication Date: 2014-09-09
- Inventor: Hyun Soo Roh , Dong Jin Kim , Yong Soon Park , Yong Kuk Kim , Young Chul Jung
- Applicant: Cheil Industries Inc.
- Applicant Address: KR Gumi-si
- Assignee: Cheil Industries Inc.
- Current Assignee: Cheil Industries Inc.
- Current Assignee Address: KR Gumi-si
- Agency: Additon, Higgins & Pendleton, P.A.
- Priority: KR10-2011-0147630 20111230
- Main IPC: C09K13/00
- IPC: C09K13/00 ; C09G1/02 ; H01L21/306 ; H01L21/3105 ; C09K3/14
Abstract:
A CMP slurry composition includes metal oxide particles, a diisocyanate compound, and deionized water. The CMP slurry composition is capable of selectively controlling polishing speed of a wafer surface having a convex portion and a concave portion, such that primary polishing and secondary polishing can be performed rapidly while stopping polishing of the nitride layer upon the secondary polishing.
Public/Granted literature
- US20130171823A1 CMP Slurry Composition and Polishing Method Using the Same Public/Granted day:2013-07-04
Information query
