Invention Grant
US08828479B2 Process for producing light absorbing layer for chalcopyrite type thin-film solar cell
有权
用于生产黄铜矿型薄膜太阳能电池的光吸收层的方法
- Patent Title: Process for producing light absorbing layer for chalcopyrite type thin-film solar cell
- Patent Title (中): 用于生产黄铜矿型薄膜太阳能电池的光吸收层的方法
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Application No.: US10599689Application Date: 2005-04-08
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Publication No.: US08828479B2Publication Date: 2014-09-09
- Inventor: Tomoyuki Kume , Takashi Komaru
- Applicant: Tomoyuki Kume , Takashi Komaru
- Applicant Address: JP Tokyo
- Assignee: Honda Motor Co., Ltd.
- Current Assignee: Honda Motor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rankin, Hill & Clark LLP
- Priority: JP2004-115489 20040409
- International Application: PCT/JP2005/006944 WO 20050408
- International Announcement: WO2005/098968 WO 20051020
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/032

Abstract:
A process for producing a light absorbing layer for thin-film solar cell that possesses a film structure having a constituent component of chalcopyrite compound (Cu(In+Ga)Se2) uniformly distributed thereinside. There is provided a process for producing a light absorbing layer, including the precursor forming step of superimposing on an Mo electrode layer, adjacent to the electrode layer, an In metal layer and a Cu—Ga alloy layer according to sputtering technique; a first selenization step of, while accommodating precursor-provided substrate in an airtight space, introducing hydrogen selenide gas in the airtight space conditioned so as to range from room temperature to 250° C.; a second selenization step of additionally introducing hydrogen selenide gas in the airtight space heated so as to range from 250° to 450° C.; a third selenization step of, while causing the hydrogen selenide gas having been introduced up to the second selenization step to remain, heating the interior of the airtight space so as to range from 450° to 650° C. and, within this range of temperature, performing heat treatment of the substrate; and a cooling step of cooling the substrate after the heat treatment.
Public/Granted literature
- US20080035199A1 Process for Producing Light Absorbing Layer for Chalcopyrite Type Thin-Film Solar Cell Public/Granted day:2008-02-14
Information query
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