Invention Grant
- Patent Title: Deposition of hydrogenated thin film
- Patent Title (中): 沉积氢化薄膜
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Application No.: US12971243Application Date: 2010-12-17
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Publication No.: US08828504B2Publication Date: 2014-09-09
- Inventor: Osama Tobail , Ahmed Abou-Kandil , Mostafa M. El-Ashry , Jeehwan Kim , Paul M. Kozlowski , Mohamed Saad , Devendra K. Sadana
- Applicant: Osama Tobail , Ahmed Abou-Kandil , Mostafa M. El-Ashry , Jeehwan Kim , Paul M. Kozlowski , Mohamed Saad , Devendra K. Sadana
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Ellenbogen & Kammer, LLP
- Agent Louis J. Percello
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C23C16/455 ; C23C16/50 ; H01L21/02 ; C23C14/14 ; C23C14/22
Abstract:
A hydrogenated thin film is formed in a controlled vacuum on a substrate by evaporating one or more solid materials and passing the resulting vapor and a hydrogen-containing gas into a space between two electrodes. One of the electrodes includes openings for allowing the vapor to enter the space. Plasma is generated within the space to cause dissociation of the hydrogen-containing gas and promote a reaction between the material(s) and hydrogen-containing gas.
Public/Granted literature
- US20120156393A1 Deposition of Hydrogenated Thin Film Public/Granted day:2012-06-21
Information query
IPC分类:
