Invention Grant
- Patent Title: Plasma enhanced cyclic chemical vapor deposition of silicon-containing films
- Patent Title (中): 含硅膜的等离子体增强循环化学气相沉积
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Application No.: US13405453Application Date: 2012-02-27
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Publication No.: US08828505B2Publication Date: 2014-09-09
- Inventor: Hareesh Thridandam , Manchao Xiao , Xinjian Lei , Thomas Richard Gaffney , Eugene Joseph Karwacki, Jr.
- Applicant: Hareesh Thridandam , Manchao Xiao , Xinjian Lei , Thomas Richard Gaffney , Eugene Joseph Karwacki, Jr.
- Applicant Address: US PA Allentown
- Assignee: Air Products and Chemicals, Inc.
- Current Assignee: Air Products and Chemicals, Inc.
- Current Assignee Address: US PA Allentown
- Agent Rosaleen P. Morris-Oskanian; Lina Yang
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/31
Abstract:
The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H3, preferably of the formula (R1R2N)SiH3 wherein R1 and R2 are selected independently from C2 to C10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.
Public/Granted literature
- US20120171874A1 Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon- Containing Films Public/Granted day:2012-07-05
Information query
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