Invention Grant
- Patent Title: Dopant host and process for production thereof
- Patent Title (中): 掺杂剂主体及其生产方法
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Application No.: US13510725Application Date: 2010-11-22
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Publication No.: US08828550B2Publication Date: 2014-09-09
- Inventor: Ryota Suzuki , Yoshio Umayahara
- Applicant: Ryota Suzuki , Yoshio Umayahara
- Applicant Address: JP Shiga
- Assignee: Nippon Electric Glass Co., Ltd.
- Current Assignee: Nippon Electric Glass Co., Ltd.
- Current Assignee Address: JP Shiga
- Agency: Keating & Bennett, LLP
- Priority: JP2009-265916 20091124
- International Application: PCT/JP2010/070764 WO 20101122
- International Announcement: WO2011/065316 WO 20110603
- Main IPC: B32B13/04
- IPC: B32B13/04 ; C03B29/00 ; H01L21/22 ; C04B35/18 ; H01L21/223

Abstract:
Provided is a dopant host with which the amount of B2O3 volatilized is unlikely to decrease over time and that has good B2O3 volatilizing ability for a long period of time. The dopant host has a laminate that includes a boron component volatilization layer containing 30 to 60 mol % of SiO2, 10 to 30 mol % of Al2O3, 15 to 50 mol % of B2O3, and 2 to 15 mol % of RO (R is an alkaline earth metal) and a heat resistant layer containing 8 to 40 mol % of SiO2, 40 to 85 mol % of Al2O3, 5 to 30 mol % of B2O3, and 0.5 to 7 mol % of RO (R is an alkaline earth metal). At least one outermost layer of the laminate is composed of the boron component volatilization layer. The laminate further includes the boron component volatilization layer inside the laminate. The boron component volatilization layer constituting at least one outermost layer of the laminate has a B2O3 content lower than the B2O3 content in the boron component volatilization layer inside the laminate.
Public/Granted literature
- US20120237780A1 DOPANT HOST AND PROCESS FOR PRODUCTION THEREOF Public/Granted day:2012-09-20
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