Invention Grant
- Patent Title: Extreme ultraviolet lithography mask and multilayer deposition method for fabricating same
- Patent Title (中): 极紫外光刻掩模及其制造方法
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Application No.: US13567900Application Date: 2012-08-06
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Publication No.: US08828625B2Publication Date: 2014-09-09
- Inventor: Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
- Applicant: Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/16
- IPC: G03F7/16 ; G03F1/24

Abstract:
A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle α is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location.
Public/Granted literature
- US20140038090A1 Extreme Ultraviolet Lithography Mask and Multilayer Deposition Method for Fabricating Same Public/Granted day:2014-02-06
Information query
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