Invention Grant
- Patent Title: Sensors using high electron mobility transistors
- Patent Title (中): 使用高电子迁移率晶体管的传感器
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Application No.: US12966531Application Date: 2010-12-13
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Publication No.: US08828713B2Publication Date: 2014-09-09
- Inventor: Fan Ren , Stephen John Pearton , Tanmay Lele
- Applicant: Fan Ren , Stephen John Pearton , Tanmay Lele
- Applicant Address: US FL Gainesville
- Assignee: University of Florida Research Foundation, Inc.
- Current Assignee: University of Florida Research Foundation, Inc.
- Current Assignee Address: US FL Gainesville
- Agency: Saliwanchik, Lloyd & Eisenschenk, P.A.
- Main IPC: G01N27/00
- IPC: G01N27/00

Abstract:
Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.
Public/Granted literature
- US20110074381A1 SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS Public/Granted day:2011-03-31
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