Invention Grant
- Patent Title: Manufacturing a semiconductor light emitting device using a trench and support substrate
- Patent Title (中): 制造使用沟槽和支撑衬底的半导体发光器件
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Application No.: US13801903Application Date: 2013-03-13
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Publication No.: US08828761B2Publication Date: 2014-09-09
- Inventor: Sung Joon Kim , Tae Sung Jang , Jong Gun Woo , Yung Ho Ryu , Tae Hun Kim , Sang Yeob Song
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0026067 20120314
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L33/60
Abstract:
A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.
Public/Granted literature
- US20130244356A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2013-09-19
Information query
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