Invention Grant
- Patent Title: Carbon nanostructure device fabrication utilizing protect layers
- Patent Title (中): 使用保护层的碳纳米结构器件制造
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Application No.: US13654416Application Date: 2012-10-18
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Publication No.: US08828762B2Publication Date: 2014-09-09
- Inventor: Jack O. Chu , Christos D. DiMitrakopoulos , Alfred Grill , Timothy J. McArdle , Dirk Pfeiffer , Katherine L. Saenger , Robert L. Wisnieff
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Louis J. Percello; Robert M. Trepp
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/786 ; H01L29/06
Abstract:
Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.
Public/Granted literature
- US20140225193A1 CARBON NANOSTRUCTURE DEVICE FABRICATION UTILIZING PROTECT LAYERS Public/Granted day:2014-08-14
Information query
IPC分类:
