Invention Grant
- Patent Title: Method for producing a light-emitting diode
- Patent Title (中): 发光二极管的制造方法
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Application No.: US13499232Application Date: 2010-09-28
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Publication No.: US08828768B2Publication Date: 2014-09-09
- Inventor: Peter Stauβ , Philipp Drechsel
- Applicant: Peter Stauβ , Philipp Drechsel
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater & Matsil, L.L.P.
- Priority: DE102009047881 20090930
- International Application: PCT/EP2010/064353 WO 20100928
- International Announcement: WO2011/039181 WO 20110407
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02 ; H01L33/00

Abstract:
A method is provided for producing a light-emitting diode. A carrier substrate has a silicon surface. A series of layers is deposited on the silicon surface in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.
Public/Granted literature
- US20130065342A1 Method for Producing a Light-Emitting Diode Public/Granted day:2013-03-14
Information query
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