Invention Grant
US08828774B2 Method for a single precursor ionic exchange to prepare semiconductor nanocrystal n-type thermoelectric material
有权
用于制备半导体纳米晶体n型热电材料的单一前体离子交换方法
- Patent Title: Method for a single precursor ionic exchange to prepare semiconductor nanocrystal n-type thermoelectric material
- Patent Title (中): 用于制备半导体纳米晶体n型热电材料的单一前体离子交换方法
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Application No.: US13866593Application Date: 2013-04-19
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Publication No.: US08828774B2Publication Date: 2014-09-09
- Inventor: Susanthri Perera , Dave Socha , Adam Z. Peng , Clinton T. Ballinger
- Applicant: Evident Technologies, Inc.
- Applicant Address: US NY Troy
- Assignee: Evident Technologies Inc.
- Current Assignee: Evident Technologies Inc.
- Current Assignee Address: US NY Troy
- Agency: Hoffman Warnick LLC
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Herein disclosed is a method of forming a thermoelectric material having an optimized stoichiometry, the method comprising: reacting a precursor material including a population of nanocrystals with a first ionic solution and a second ionic solution to form a reacted mixture.
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