Invention Grant
- Patent Title: Annealing processes for photovoltaics
- Patent Title (中): 光伏退火工艺
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Application No.: US13234055Application Date: 2011-09-15
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Publication No.: US08828782B2Publication Date: 2014-09-09
- Inventor: Kyle L. Fujdala , Zhongliang Zhu , David Padowitz , Paul R. Markoff Johnson , Wayne A. Chomitz , Matthew C. Kuchta
- Applicant: Kyle L. Fujdala , Zhongliang Zhu , David Padowitz , Paul R. Markoff Johnson , Wayne A. Chomitz , Matthew C. Kuchta
- Applicant Address: US CA Santa Clara
- Assignee: Precursor Energetics, Inc.
- Current Assignee: Precursor Energetics, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Eckman Basu LLP
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L21/02 ; H01L27/142 ; H01L31/0224 ; H01L31/0392 ; H01L31/032 ; H01L31/0272
Abstract:
Processes for making a solar cell by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to control the stoichiometry of metal atoms in making a solar cell for targeting a particular concentration and providing a gradient of metal atom concentration. A selenium layer can be used in annealing a thin film photovoltaic absorber material.
Public/Granted literature
- US20120067424A1 ANNEALING PROCESSES FOR PHOTOVOLTAICS Public/Granted day:2012-03-22
Information query
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