Invention Grant
- Patent Title: Semiconductor device and method
- Patent Title (中): 半导体器件及方法
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Application No.: US12112807Application Date: 2008-04-30
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Publication No.: US08828804B2Publication Date: 2014-09-09
- Inventor: Ivan Nikitin , Alexander Heinrich , Stefan Landau
- Applicant: Ivan Nikitin , Alexander Heinrich , Stefan Landau
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An electronic device and fabrication of an electronic device. One embodiment provides applying a paste including electrically conductive particles to a surface of a semiconductor wafer. The semiconductor wafer is singulated with the electrically conductive particles for obtaining a plurality of semiconductor chips. At least one of the plurality of semiconductor chips is placed over a carrier with the electrically conductive particles facing the carrier. The electrically conductive particles are heated until the at least one semiconductor chip adheres to the carrier.
Public/Granted literature
- US20090273066A1 SEMICONDUCTOR DEVICE AND METHOD Public/Granted day:2009-11-05
Information query
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